Mechanism of Electronegativity Heterojunction of Nanometer Amorphous-Boron on Crystalline Silicon: An Overview

نویسندگان

چکیده

The discovery of the extremely shallow amorphous boron-crystalline silicon heterojunction occurred during development highly sensitive, hard and robust detectors for low-penetration-depth ionizing radiation, such as ultraviolet photons low-energy electrons (below 1 keV). For many years it was believed that junction created by chemical vapor deposition boron on n-type crystalline a p-n junction, although experimental results could not provide evidence conclusion. Only recently, quantum-mechanics based modelling revealed unique nature formation mechanism this new junction. Here, we review initiation history understanding a-B/c-Si interface (henceforth called “boron-silicon junction”), well its importance microelectronics industry, followed scientific perception junctions. Future developments possible research directions are also discussed.

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ژورنال

عنوان ژورنال: Crystals

سال: 2021

ISSN: ['2073-4352']

DOI: https://doi.org/10.3390/cryst11020108